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LIST OF PUBLICATIONS Hideki KOYAMA |
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1.
Work at Tokyo Univ. of Agriculture and Technology (as a student) Journal
papers 1) N. Koshida, H.
Koyama, and Y. Kiuchi,
“Photoelectrochemical behavior of n-type porous-Si
electrodes”, Jpn. J. Appl.
Phys. 25 (7) 1069-1072 (1986). 2) H. Koyama and N. Koshida,
“Photoelectrochemical effects of surface
modification of n-type Si with porous layer”, J. Electrochem. Soc. 138 (1)
254-260 (1991). |
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2. Work at Tokyo Univ. of Agriculture and Technology (as an
assistant professor) Journal
papers 1) N. Koshida
and H.
Koyama, “Efficient visible photoluminescence from porous silicon”,
Jpn. J. Appl. Phys. 30
(7B) L1221-L1223 (1991). 2) H. Koyama, M. Araki, Y. Yamamoto,
and N. Koshida, “Visible photoluminescence of
porous Si and its related optical properties”, Jpn. J. Appl. Phys. 30
(12B) 3606-3609 (1991). 3) N. Koshida
and H. Koyama,“Visible
electroluminescence form porous silicon”, Appl. Phys. Lett. 60 (3) 347-349
(1992). 4) N. Koshida
and H. Koyama,“Visible
light emission from porous silicon”, Optoelectronics -Devices and
Technologies- 7 (1) 103-115 (1992) (Invited). 5) N. Koshida
and H.
Koyama, “Photoluminescent and
electroluminescent properties of porous silicon”, Nanotechnology 3,
192-195 (1992). 6) T. Ueno, Y. Akiba, T. Shinohara, H. Koyama, N. Koshida,
and Y. Tarui, “Radiative transition with visible
light in electrochemical anodized polycrystalline silicon”, Jpn. J. Appl. Phys. 32
(1A/B) L5-L7 (1993). 7) H. Koyama, T. Oguro, and N. Koshida,
“Electrical quenching of photoluminescence from porous silicon”, Appl. Phys. Lett. 62 (24)
3177-3179 (1993). 8) Y. Uchida, N. Koshida, H. Koyama, and Y. Yamamoto, “Paramagnetic
center in porous silicon: A dangling bond with C3V symmetry”, Appl. Phys. Lett. 63 (7)
961-963 (1993). 9) N. Koshida,
H. Koyama,
Y. Yamamoto, and G. J. Collins, “Visible electroluminescence from porous
silicon diodes with an electropolymerized contact”,
Appl. Phys. Lett. 63 (19)
2655-2657 (1993). 10) N. Koshida,
H. Koyama,
Y. Suda, Y. Yamamoto, M. Araki, T. Saito, K. Sato,
N. Sata, and S. Shin, “Optical characterization of
porous silicon by synchrotron radiation reflectance spectra analyses”, Appl. Phys. Lett. 63 (20)
2774-2776 (1993). 11) H. Koyama and N. Koshida, “Photo-assisted tuning of luminescence from
porous silicon”, J. Appl. Phys. 74
(10) 6365-6367 (1993). 12) H. Koyama and N. Koshida, “Electrical properties of luminescent porous
silicon”, J. Lumin. 57,
293-299 (1993) (Invited). 13) Y. Suda,
T. Ban, T. Koizumi, H. Koyama, Y. Tezuka,
S. Shin, and N. Koshida, “Surface structures and
photoluminescence mechanisms of porous Si”, Jpn. J. Appl. Phys. 33
(1B) 581-585 (1994). 14) T. Ozaki, M. Araki, S.
Yoshimura, H.
Koyama, and N. Koshida, “Photoelectric
properties of porous silicon”, J.
Appl. Phys. 76 (3) 1986-1988 (1994). 15) H. Koyama, T. Nakagawa, T.
Ozaki, and N. Koshida, “Post-anodization filtered
illumination of porous silicon in HF solutions: An effective method to
improve luminescence properties”, Appl.
Phys. Lett. 65 (13) 1656-1658 (1994). 16) H. Koyama, N. Shima, T. Ozaki, and N. Koshida,
“Evidence of homogeneously broadened spectra in the visible photoluminescence
of porous silicon”, Jpn. J.
Appl. Phys. 33 (12B) L1737-L1739 (1994). 17) T. Ozaki, T. Oguro, H. Koyama, and N. Koshida,
“The relationship between photoconduction effects and luminescent properties
of porous silicon”, Jpn. J.
Appl. Phys. 34 (2B) 946-949 (1995). 18) N. Koshida,
T. Ozaki, X. Sheng, and H. Koyama,“Cold electron emission from
electroluminescent porous silicon diodes”, Jpn. J. Appl. Phys. 34 (6A)
L705-L707 (1995). 19) H. Koyama and N. Koshida, “Polarization retention in the visible
photoluminescence of porous silicon”, Phys. Rev. B 52 (4) 2649-2655
(1995). 20) H. Koyama, T. Ozaki, and N. Koshida, “Decay dynamics of the homogeneously broadened
photoluminescence of porous silicon”, Phys. Rev. B 52 (16)
R11561-R11564 (1995). 21) M. Araki, H. Koyama,
and N. Koshida, “Optical cavity based on porous
silicon superlattice technology”, Jpn. J. Appl. Phys. 35
(2B) 1041-1044 (1996). 22) H. Koyama, N. Shima, and N. Koshida, “Large
and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon”, Phys. Rev. B 53 (20)
R13291-R13294 (1996). 23) M. Araki, H. Koyama,
and N. Koshida, “Fabrication and fundamental
properties of an edge-emitting device with step-index porous silicon
waveguide”, Appl. Phys. Lett. 68
(21) 2999-3000 (1996). 24) M. Araki, H. Koyama,
and N. Koshida, “Precisely tuned emission from
porous silicon vertical optical cavity in the visible region”, J. Appl. Phys. 80 (9)
4841-4844 (1996). 25) M. Araki, H. Koyama,
and N. Koshida, “Controlled electroluminescence
spectra of porous silicon diodes with a vertical optical cavity”, Appl. Phys. Lett. 69 (20)
2956-2958 (1996). 26) T. Nakagawa, H. Koyama,
and N. Koshida, “Control of structure and optical
anisotropy in porous Si by magnetic-field assisted anodization”, Appl. Phys. Lett. 69 (21)
3206-3208 (1996). 27) H. Mizuno, H. Koyama,
and N. Koshida, “Oxide-free blue photoluminescence
from photochemically etched porous silicon”, Appl. Phys. Lett. 69 (25)
3779-3781 (1996). 28) T. Oguro,
H. Koyama,
T. Ozaki, and N. Koshida, “Mechanism of the visible
electroluminescence from metal/porous silicon/n-Si devices”, J. Appl. Phys. 81 (3)
1407-1412 (1997). 29) H. Koyama and N. Koshida, “Spectroscopic analysis of the blue-green
emission from oxidized porous silicon: possible evidence for Si-nanostructure-based
mechanisms”, Solid
State Commun. 103 (1) 37-41 (1997). 30) H. Mizuno, H. Koyama,
and N. Koshida, “Photo-assisted continuous tuning
of photoluminescence spectra of porous silicon”, Thin Solid Films 297,
61-63 (1997). 31) X. Sheng, T. Ozaki, H. Koyama,
N. Koshida, T. Yoshikawa, M. Yamaguchi, and K.
Ogasawara, “Operation of electroluminescent porous silicon diodes as
surface-emitting cold cathodes”, Thin Solid Films 297,
314-316 (1997). 32) M. Araki, H. Koyama,
and N. Koshida, “Functional properties of
luminescent porous silicon as a component of optoelectronic integration”, Superlattices and
Microstructures 22 (3) 365-370 (1997). 33) X. Sheng, H. Koyama,
N. Koshida, S. Iwasaki, N. Negishi,
T. Chuman, T. Yoshikawa, and K. Ogasawara,
“Improved cold electron emission characteristics of electroluminescent porous
silicon diodes”, J. Vac. Sci.
Technol. B 15 (5) 1661-1665 (1997). 34) H. Koyama, Y. Matsushita, and N.
Koshida, “Activation of blue emission from oxidized
porous silicon by annealing in water vapor”, J. Appl. Phys. 83 (3)
1776-1778 (1998). 35) X. Sheng, H. Koyama,
and N. Koshida, “Efficient surface-emitting cold cathodes
based on electroluminescent porous silicon diodes”, J. Vac. Sci. Technol. B 16 (2)
793-795 (1998). 36) S. Tanaka, H. Koyama,
and N. Koshida, “Photoluminescence decay dynamics
of ion-irradiated porous silicon: evidence for the absence of carrier migration”,
Appl. Phys. Lett. 73 (16)
2334-2336 (1998). Conference
Proceedings 1) H. Koyama and N. Koshida, “Visible photoluminescent
properties of porous silicon”, Extended Abstracts of the 1991 Int. Conf.
Solid State Devices and Materials, Yokohama, 1991 (Business Center for
Academic Societies Japan, Tokyo, 1991) pp.314-316. 2) N. Koshida
and H.
Koyama, “Visible electro- and photoluminescence from porous
silicon and its related optoelectronic properties”, Light Emission from
Silicon, MRS Symp. Proc. Vol. 256, S. S. Iyer, R. T. Collins, and L. T. Canham,
ed. (Mater. Res. Soc., Pittsburgh, PA, 1992) pp. 219-222. 3) N. Koshida
and H.
Koyama, “Optoelectronic characterizations of porous silicon”, Microcrystalline
Semiconductors: Materials Science and Devices, MRS Symp.
Proc. Vol. 283, P. M. Fauchet, C. C. Tsai, L. T. Canham, I. Shimizu, and Y. Aoyagi, ed. (Mater. Res. Soc.,
Pittsburgh, PA, 1993) pp.337-342. 4) Y. Suda,
T. Ban, T. Koizumi, H. Koyama, Y. Tezuka,
S. Shin, and N. Koshida, “Surface structures and
photoluminescence mechanisms of porous Si”, Extended Abstracts of the 1993
Int. Conf. Solid State Devices and Materials, Makuhari,
1993 (Business Center for Academic Societies Japan, Tokyo, 1993) pp.651-653. 5) H. Koyama, T. Oguro, T. Ozaki, Y. Suda, and
N. Koshida, “Electronic and optoelectronic analyses
of visible luminescence mechanism of porous silicon”, Semiconductor
Silicon/1994, Proc. Seventh Int. Symp. Silicon
Materials Science and Technology, H. R. Huff, W. Bergholz,
and K. Sumino, ed. (The Electrochem. Soc.,
Pennington, NJ, 1994) pp.511-522. 6) T. Ozaki, T. Oguro, H. Koyama, and N. Koshida,
“Relation between photoconduction effects and luminescent properties of
porous silicon”, Extended Abstracts of the 1994 Int. Conf. Solid State
Devices and Materials, Yokohama, 1994 (Business Center for Academic Societies
Japan, Tokyo, 1994) pp.751-753. 7) N. Koshida,
H. Mizuno, H.
Koyama, and G. J. Collins, “Visible electroluminescence from
porous silicon diodes with immersed conducting polymer contacts”, Proc. Int.
Conf. Optical Properties of Nanostructures, Sendai, 1994 [Jpn.
J. Appl. Phys. 34, Suppl. 34-1 (1995)] pp. 92-94. 8) N. Koshida,
H. Koyama,
T. Ozaki, M. Araki, T. Oguro, and H. Mizuno, “Optoelectronic
effects in porous silicon related to the visible luminescence mechanism”, Microcrystalline
and Nanocrystalline Semiconductors, MRS Symp. Proc. Vol. 358, R. W. Collins, C. C. Tsai, M.
Hirose, F. Koch, and L. Brus, ed. (Mater. Res.
Soc., Pittsburgh, PA, 1995) pp.695-700. 9) M. Araki, H. Koyama,
and N. Koshida, “Optical cavity based on porous
silicon superlattice technology”, Extended
Abstracts of the 1995 Int. Conf. Solid State Devices and Materials, Osaka,
1995 (Business Center for Academic Societies Japan, Tokyo, 1995) pp. 371-373. 10) X. Sheng, T. Ozaki, H. Koyama,
and N. Koshida, “Properties of porous silicon LED
as a surface-emitting cold cathode”, Proceedings of the International
Symposium on Advanced Luminescent Materials, D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J.
Brueck, ed. (The Electrochem.
Soc., Pennington, NJ, 1996) pp.87-93. 11) M. Araki, H. Koyama,
and N. Koshida, “Precisely tuned optical cavity
using porous silicon superlattice structures”,
Proceedings of the International Symposium on Advanced Luminescent Materials,
D.J. Lockwood, P.M. Fauchet, N. Koshida,
and S.R.J. Brueck, ed. (The Electrochem.
Soc., Pennington, NJ, 1996) pp.139-145. 12) K. Ueno, T. Ozaki, H. Koyama,
and N. Koshida, “Nonlinear electrical functions of
porous silicon light-emitting diodes”, Advances in Microcrystalline and Nanocrystalline Semiconductors-1996, MRS Symp. Proc. Vol. 452, R.W. Collins, P.M. Fauchet, I. Shimizu, J.-C. Vial, T. Shimada, and A.P. Alivisatos, ed. (Mater. Res. Soc., Pittsburgh, PA, 1997)
pp. 699-704. 13) T. Nakagawa, H. Koyama
and N. Koshida, “Effects of external magnetic field
on the formation and optical properties of luminescent porous silicon”,
Proceedings of the International Symposium on Pits and Pores: Formation,
Properties and Significance for Advanced Luminescent Materials, P. Schmuki, D.J. Lockwood, H.S. Isaacs, and A. Bsiesy, ed.(The Electrochem.
Soc., Pennington, NJ, 1997) pp. 235-241. 14) M. Araki, M. Takahashi, H. Koyama,
and N. Koshida, “Performances of porous silicon
optical waveguides”, Materials and Devices for Silicon-Based
Optoelectronics, MRS Symp. Proc. Vol. 486, A. Polman, S. Coffa, and R. Soref ed. (Mater. Res. Soc., Warrendale,
PA, 1998) pp. 107-112. 15) N. Koshida,
E. Takizawa, H. Mizuno, S. Arai, H. Koyama, and T. Sameshima,
“Electroluminescent devices based on polycrystalline silicon films for
large-area applications”, Materials and Devices for Silicon-Based
Optoelectronics, MRS Symp. Proc. Vol. 486, A. Polman, S. Coffa, and R. Soref ed. (Mater. Res. Soc., Warrendale,
PA, 1998) pp. 151-156. |
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3.
Work at the University of Rochester Journal
papers 1) H. Koyama and P.M. Fauchet, “Very large continuous-wave-laser-induced
optical absorption in porous silicon films: evidence for thermal effects”, Appl. Phys. Lett. 73 (22)
3259-3261 (1998). 2) H. Koyama, L. Tsybeskov, and P.M. Fauchet,
“Strongly nonlinear luminescence in oxidized porous silicon films”, J. Lumin. 80,
99-102 (1999). 3) H. Koyama and P.M. Fauchet, “Laser-induced thermal effects on the optical
properties of free-standing porous silicon films”, J. Appl. Phys. 87 (4)
1788-1794 (2000). 4) H. Koyama and P.M. Fauchet, “Anisotropic polarization memory in thermally
oxidized porous silicon”, Appl.
Phys. Lett. 77 (15) 2316-2318 (2000). Conference
Proceedings 1) H. Koyama and P.M. Fauchet, “Strongly superlinear
light emission and large induced absorption in oxidized porous silicon
films”, Microcrystalline and Nanocrystalline
Semiconductors-1998, MRS Symp. Proc. Vol. 536,
L.T. Canham, M.J. Sailor, K. Tanaka, and C.-C. Tsai
ed. (Mater. Res. Soc., Warrendale, PA, 1999) pp.
9-14. 2) H.A. Lopez, S. Chan, L. Tsybeskov, H. Koyama, V.P. Bondarenko,
and P.M. Fauchet, “Integration of multilayers in Er-doped porous silicon structures and advances in 1.5 μm optoelectronic devices”, Microcrystalline and Nanocrystalline Semiconductors-1998, MRS Symp. Proc. Vol. 536, L.T. Canham,
M.J. Sailor, K. Tanaka, and C.-C. Tsai ed. (Mater. Res. Soc., Warrendale, PA, 1999) pp. 135-140. 3) C.C. Striemer,
S. Chan, H.A. Lopez, K.D. Hirschman, H. Koyama, Q. Zhu, L. Tsybeskov,
P.M. Fauchet, N.M. Kalkhoran,
and L. Depaulis, “LEDs based on oxidized porous
polysilicon on a transparent substrate”, Microcrystalline and Nanocrystalline Semiconductors-1998, MRS Symp. Proc. Vol. 536, L.T. Canham,
M.J. Sailor, K. Tanaka, and C.-C. Tsai ed. (Mater. Res. Soc., Warrendale, PA, 1999) pp. 511-515. 4) H. Koyama and P.M. Fauchet, “Anomalous behavior of polarization memory in
oxidized porous silicon”, Proc. 1st Int. Symp.
Advanced Luminescent Materials and Quantum Confinement, M. Cahay, S. Bandyopadhyay, D.J.
Lockwood, J.P. Leburton, N. Koshida,
M. Meyyappan, and T. Sakamoto ed. (The Electrochem. Soc., Pennington, NJ, 1999) pp. 21-26. |