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過去の論文・学会発表 兵庫教育大学 大学院 小山英樹 |
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１．東京農工大学在学中の研究成果 ●論文 1) N. Koshida, H.
Koyama, and Y. Kiuchi,
“Photoelectrochemical behavior of n-type porous-Si electrodes”, Jpn. J. Appl. Phys. 25 (7)
1069-1072 (1986). 2) H. Koyama and N. Koshida,
“Photoelectrochemical effects of surface modification of n-type Si with
porous layer”, J. Electrochem.
Soc. 138 (1) 254-260 (1991). ●学会発表 1) 小山英樹，越田信義，木内雄二，“n型多孔質Siを用いた光化学電池”， 第32回応用物理学関係連合講演会 31p-A-8，1985年3月． 2) 越前谷一彦，小山英樹，越田信義，木内雄二，“多孔質Si電極を用いた光電気化学太陽電池”，第34回応用物理学関係連合講演会 29a-S-7，1987年3月． |
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●論文 1) 天野壮，横山精一，小山英樹，天野覚，望月孝晏，“半導体レーザー励起NYABグリーンレーザー”，レーザー研究 17
(12) 895-898 (1989). ●学会発表 1) 小山英樹，横山精一，天野壮，望月孝晏，“LD励起1.3μm, 0.9μm
Nd:YAGレーザー”，第36回応用物理学関係連合講演会
2p-PA-5， 1989年3月，予稿集 p.855． 2) 藤野正志，小山英樹，横山精一，天野壮，天野覚，望月孝晏，“LD励起Nd:YAGレーザーによるブルー光発生”，第50回応用物理学会学術講演会 27a-ZL-4，1989年9月，予稿集 p. 807． 3) 横山精一，藤野正志，小山英樹，天野壮，天野覚，望月孝晏，“LD励起NYABグリーンレーザー”，レーザー学会学術講演会第10回年次大会
25aV9，1990年1月． ●その他 1) 天野壮，横山精一，小山英樹，天野覚，望月孝晏，“LD励起固体レーザーの現状” 日本学術振興会 光と電波の境界領域 第130委員会研究会資料 (1989) pp.7-12. |
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●論文 1) N. Koshida and H. Koyama,
“Efficient visible photoluminescence from porous silicon”, Jpn. J. Appl. Phys. 30
(7B) L1221-L1223 (1991). 2) H. Koyama, M. Araki, Y.
Yamamoto, and N. Koshida, “Visible photoluminescence of porous Si and its
related optical properties”, Jpn.
J. Appl. Phys. 30 (12B) 3606-3609 (1991). 3) N. Koshida and H. Koyama,“Visible
electroluminescence form porous silicon”, Appl. Phys. Lett. 60 (3)
347-349 (1992). 4) N. Koshida and H. Koyama,“Visible
light emission from porous silicon”, Optoelectronics -Devices and
Technologies- 7 (1) 103-115 (1992) (Invited). 5) N. Koshida and H. Koyama,
“Photoluminescent and electroluminescent properties of porous silicon”, Nanotechnology 3,
192-195 (1992). 6) 小山英樹，越田信義
“多孔質シリコンの可視域発光特性” 光学21 (10) 698-704 (1992). 7) 小山英樹，越田信義
“多孔質シリコンの構造と可視発光” 表面科学 13 (7)
402-408 (1992). 8) 越田信義，小山英樹 “多孔質シリコンの可視発光” 応用物理 61 (8) 805-808 (1992). 9) 越田信義，小山英樹 “光るシリコンの発光機構：バンド構造変化と表面束縛状態の相補的効果”
応用物理 61 (12) 1269-1271 (1992). 10) T. Ueno, Y. Akiba, T.
Shinohara, H.
Koyama, N. Koshida, and Y. Tarui, “Radiative transition with
visible light in electrochemical anodized polycrystalline silicon”, Jpn. J. Appl. Phys. 32
(1A/B) L5-L7 (1993). 11) H. Koyama, T. Oguro, and N.
Koshida, “Electrical quenching of photoluminescence from porous silicon”, Appl. Phys. Lett. 62 (24)
3177-3179 (1993). 12) Y. Uchida, N. Koshida, H. Koyama,
and Y. Yamamoto, “Paramagnetic center in porous silicon: A dangling bond with
C3V symmetry”, Appl.
Phys. Lett. 63 (7) 961-963 (1993). 13) N. Koshida, H. Koyama,
Y. Yamamoto, and G. J. Collins, “Visible electroluminescence from porous
silicon diodes with an electropolymerized contact”, Appl. Phys. Lett. 63 (19)
2655-2657 (1993). 14) N. Koshida, H. Koyama,
Y. Suda, Y. Yamamoto, M. Araki, T. Saito, K. Sato, N. Sata, and S. Shin,
“Optical characterization of porous silicon by synchrotron radiation
reflectance spectra analyses”, Appl.
Phys. Lett. 63 (20) 2774-2776 (1993). 15) H. Koyama and N. Koshida,
“Photo-assisted tuning of luminescence from porous silicon”, J. Appl. Phys. 74 (10) 6365-6367
(1993). 16) H. Koyama and N. Koshida,
“Electrical properties of luminescent porous silicon”, J. Lumin. 57,
293-299 (1993) (Invited). 17)
越田信義，小山英樹，須田良幸 “ポーラスシリコン” 表面科学 14 (2)
85-89 (1993). 18) 越田信義，小山英樹 “シリコンの発光現象”
電子情報通信学会誌 76 (5) 498-501
(1993). 19) Y. Suda, T. Ban, T. Koizumi, H. Koyama,
Y. Tezuka, S. Shin, and N. Koshida, “Surface structures and photoluminescence
mechanisms of porous Si”, Jpn.
J. Appl. Phys. 33 (1B) 581-585 (1994). 20) T. Ozaki, M. Araki, S.
Yoshimura, H.
Koyama, and N. Koshida, “Photoelectric properties of porous
silicon”, J. Appl. Phys. 76
(3) 1986-1988 (1994). 21) H. Koyama, T. Nakagawa, T.
Ozaki, and N. Koshida, “Post-anodization filtered illumination of porous
silicon in HF solutions: An effective method to improve luminescence
properties”, Appl. Phys. Lett. 65
(13) 1656-1658 (1994). 22) H. Koyama, N. Shima, T. Ozaki,
and N. Koshida, “Evidence of homogeneously broadened spectra in the visible
photoluminescence of porous silicon”, Jpn. J. Appl. Phys. 33
(12B) L1737-L1739 (1994). 23) T. Ozaki, T. Oguro, H. Koyama,
and N. Koshida, “The relationship between photoconduction effects and
luminescent properties of porous silicon”, Jpn. J. Appl. Phys. 34 (2B)
946-949 (1995). 24) N. Koshida, T. Ozaki, X.
Sheng, and H.
Koyama,“Cold electron emission from electroluminescent porous
silicon diodes”, Jpn. J. Appl.
Phys. 34 (6A) L705-L707 (1995). 25) H. Koyama and N. Koshida,
“Polarization retention in the visible photoluminescence of porous silicon”, Phys. Rev. B 52 (4) 2649-2655
(1995). 26) H. Koyama, T. Ozaki, and N.
Koshida, “Decay dynamics of the homogeneously broadened photoluminescence of
porous silicon”, Phys.
Rev. B 52 (16) R11561-R11564 (1995). 27) M. Araki, H. Koyama,
and N. Koshida, “Optical cavity based on porous silicon superlattice
technology”, Jpn. J. Appl.
Phys. 35 (2B) 1041-1044 (1996). 28) H. Koyama, N. Shima, and N.
Koshida, “Large and irregular shift of photoluminescence excitation spectra
observed in photochemically etched porous silicon”, Phys. Rev. B 53 (20)
R13291-R13294 (1996). 29) M. Araki, H. Koyama,
and N. Koshida, “Fabrication and fundamental properties of an edge-emitting
device with step-index porous silicon waveguide”, Appl. Phys. Lett. 68 (21)
2999-3000 (1996). 30) M. Araki, H. Koyama,
and N. Koshida, “Precisely tuned emission from porous silicon vertical
optical cavity in the visible region”, J. Appl. Phys. 80 (9)
4841-4844 (1996). 31) M. Araki, H. Koyama,
and N. Koshida, “Controlled electroluminescence spectra of porous silicon
diodes with a vertical optical cavity”, Appl. Phys. Lett. 69 (20)
2956-2958 (1996). 32) T. Nakagawa, H. Koyama,
and N. Koshida, “Control of structure and optical anisotropy in porous Si by
magnetic-field assisted anodization”, Appl. Phys. Lett. 69 (21)
3206-3208 (1996). 33) H. Mizuno, H. Koyama,
and N. Koshida, “Oxide-free blue photoluminescence from photochemically
etched porous silicon”, Appl.
Phys. Lett. 69 (25) 3779-3781 (1996). 34) T. Oguro, H. Koyama,
T. Ozaki, and N. Koshida, “Mechanism of the visible electroluminescence from
metal/porous silicon/n-Si devices”, J.
Appl. Phys. 81 (3) 1407-1412 (1997). 35) H. Koyama and N. Koshida,
“Spectroscopic analysis of the blue-green emission from oxidized porous
silicon: possible evidence for Si-nanostructure-based mechanisms”, Solid State Commun. 103
(1) 37-41 (1997). 36) H. Mizuno, H. Koyama,
and N. Koshida, “Photo-assisted continuous tuning of photoluminescence
spectra of porous silicon”, Thin Solid Films 297,
61-63 (1997). 37) X. Sheng, T. Ozaki, H. Koyama,
N. Koshida, T. Yoshikawa, M. Yamaguchi, and K. Ogasawara, “Operation of
electroluminescent porous silicon diodes as surface-emitting cold cathodes”, Thin Solid Films 297,
314-316 (1997). 38) M. Araki, H. Koyama,
and N. Koshida, “Functional properties of luminescent porous silicon as a
component of optoelectronic integration”, Superlattices and
Microstructures 22 (3) 365-370 (1997). 39) X. Sheng, H. Koyama,
N. Koshida, S. Iwasaki, N. Negishi, T. Chuman, T. Yoshikawa, and K.
Ogasawara, “Improved cold electron emission characteristics of
electroluminescent porous silicon diodes”, J. Vac. Sci. Technol. B 15 (5)
1661-1665 (1997). 40) H. Koyama, Y. Matsushita, and N.
Koshida, “Activation of blue emission from oxidized porous silicon by
annealing in water vapor”, J.
Appl. Phys. 83 (3) 1776-1778 (1998). 41) X. Sheng, H. Koyama,
and N. Koshida, “Efficient surface-emitting cold cathodes based on
electroluminescent porous silicon diodes”, J. Vac. Sci. Technol. B 16 (2)
793-795 (1998). 42) S. Tanaka, H. Koyama,
and N. Koshida, “Photoluminescence decay dynamics of ion-irradiated porous
silicon: evidence for the absence of carrier migration”, Appl. Phys. Lett. 73 (16) 2334-2336
(1998). ●学会発表 1) H. Koyama and N. Koshida, “Visible
photoluminescent properties of porous silicon”, Extended Abstracts of the
1991 Int. Conf. Solid State Devices and Materials, Yokohama, 1991 (Business
Center for Academic Societies Japan, Tokyo, 1991) pp.314-316. 2) N. Koshida and H. Koyama,
“Visible electro- and photoluminescence from porous silicon and its related
optoelectronic properties”, Light Emission from Silicon, MRS Symp.
Proc. Vol. 256, S. S. Iyer, R. T. Collins, and L. T. Canham, ed. (Mater. Res.
Soc., Pittsburgh, PA, 1992) pp. 219-222. 3) N. Koshida and H. Koyama,
“Optoelectronic characterizations of porous silicon”, Microcrystalline
Semiconductors: Materials Science and Devices, MRS Symp. Proc. Vol. 283,
P. M. Fauchet, C. C. Tsai, L. T. Canham, I. Shimizu, and Y. Aoyagi, ed.
(Mater. Res. Soc., Pittsburgh, PA, 1993) pp.337-342. 4) Y. Suda, T. Ban, T. Koizumi, H. Koyama,
Y. Tezuka, S. Shin, and N. Koshida, “Surface structures and photoluminescence
mechanisms of porous Si”, Extended Abstracts of the 1993 Int. Conf. Solid
State Devices and Materials, Makuhari, 1993 (Business Center for Academic
Societies Japan, Tokyo, 1993) pp.651-653. 5) H. Koyama, T. Oguro, T. Ozaki,
Y. Suda, and N. Koshida, “Electronic and optoelectronic analyses of visible luminescence
mechanism of porous silicon”, Semiconductor Silicon/1994, Proc.
Seventh Int. Symp. Silicon Materials Science and Technology, H. R. Huff, W.
Bergholz, and K. Sumino, ed. (The Electrochem. Soc., Pennington, NJ, 1994)
pp.511-522. 6) T. Ozaki, T. Oguro, H. Koyama,
and N. Koshida, “Relation between photoconduction effects and luminescent
properties of porous silicon”, Extended Abstracts of the 1994 Int. Conf.
Solid State Devices and Materials, Yokohama, 1994 (Business Center for
Academic Societies Japan, Tokyo, 1994) pp.751-753. 7) N. Koshida, H. Mizuno, H. Koyama,
and G. J. Collins, “Visible electroluminescence from porous silicon diodes
with immersed conducting polymer contacts”, Proc. Int. Conf. Optical
Properties of Nanostructures, Sendai, 1994 [Jpn. J. Appl. Phys. 34, Suppl.
34-1 (1995)] pp. 92-94. 8) N. Koshida, H. Koyama,
T. Ozaki, M. Araki, T. Oguro, and H. Mizuno, “Optoelectronic effects in
porous silicon related to the visible luminescence mechanism”, Microcrystalline
and Nanocrystalline Semiconductors, MRS Symp. Proc. Vol. 358, R. W.
Collins, C. C. Tsai, M. Hirose, F. Koch, and L. Brus, ed. (Mater. Res. Soc.,
Pittsburgh, PA, 1995) pp.695-700. 9) M. Araki, H. Koyama, and N. Koshida,
“Optical cavity based on porous silicon superlattice technology”, Extended
Abstracts of the 1995 Int. Conf. Solid State Devices and Materials, Osaka,
1995 (Business Center for Academic Societies Japan, Tokyo, 1995) pp. 371-373. 10) X. Sheng, T. Ozaki, H. Koyama,
and N. Koshida, “Properties of porous silicon LED as a surface-emitting cold
cathode”, Proceedings of the International Symposium on Advanced Luminescent
Materials, D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J. Brueck, ed.
(The Electrochem. Soc., Pennington, NJ, 1996) pp.87-93. 11) M. Araki, H. Koyama,
and N. Koshida, “Precisely tuned optical cavity using porous silicon
superlattice structures”, Proceedings of the International Symposium on
Advanced Luminescent Materials, D.J. Lockwood, P.M. Fauchet, N. Koshida, and
S.R.J. Brueck, ed. (The Electrochem. Soc., Pennington, NJ, 1996) pp.139-145. 12) K. Ueno, T. Ozaki, H. Koyama,
and N. Koshida, “Nonlinear electrical functions of porous silicon
light-emitting diodes”, Advances in Microcrystalline and Nanocrystalline
Semiconductors-1996, MRS Symp. Proc. Vol. 452, R.W. Collins, P.M.
Fauchet, I. Shimizu, J.-C. Vial, T. Shimada, and A.P. Alivisatos, ed. (Mater.
Res. Soc., Pittsburgh, PA, 1997) pp. 699-704. 13) T. Nakagawa, H. Koyama
and N. Koshida, “Effects of external magnetic field on the formation and
optical properties of luminescent porous silicon”, Proceedings of the
International Symposium on Pits and Pores: Formation, Properties and
Significance for Advanced Luminescent Materials, P. Schmuki, D.J. Lockwood,
H.S. Isaacs, and A. Bsiesy, ed.(The Electrochem. Soc., Pennington, NJ, 1997)
pp. 235-241. 14) M. Araki, M. Takahashi, H. Koyama,
and N. Koshida, “Performances of porous silicon optical waveguides”, Materials
and Devices for Silicon-Based Optoelectronics, MRS Symp. Proc. Vol. 486,
A. Polman, S. Coffa, and R. Soref ed. (Mater. Res. Soc., Warrendale, PA,
1998) pp. 107-112. 15) N. Koshida, E. Takizawa, H.
Mizuno, S. Arai, H. Koyama, and T. Sameshima,
“Electroluminescent devices based on polycrystalline silicon films for
large-area applications”, Materials and Devices for Silicon-Based
Optoelectronics, MRS Symp. Proc. Vol. 486, A. Polman, S. Coffa, and R.
Soref ed. (Mater. Res. Soc., Warrendale, PA, 1998) pp. 151-156. （国内学会は省略） ●その他 1) 小山英樹，越田信義
“期待される新光源（１）超微細構造材料：多孔質シリコン” オプトロニクス 1993年7月号，pp.70-75. 2) 小山英樹，越田信義
“多孔質Siの可視発光とその機構” 第２１回薄膜・表面物理セミナーテキスト（応用物理学会，1993）pp. 111-123. 3) 小山英樹，松下友香，熊谷文香，越田信義
“熱酸化した多孔質シリコンの青色発光特性 ―Siナノ構造の直接遷移発光の可能性―” 超微粒子とクラスター懇談会 第１回研究会 講演予稿集 pp. 155-158 (1997). 4) 小山英樹他120名共著 “図解光デバイス辞典” オプトロニクス社 (1996)． |
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●論文 1) H. Koyama and P.M. Fauchet,
“Very large continuous-wave-laser-induced optical absorption in porous
silicon films: evidence for thermal effects”, Appl. Phys. Lett. 73 (22)
3259-3261 (1998). 2) H. Koyama, L. Tsybeskov, and
P.M. Fauchet, “Strongly nonlinear luminescence in oxidized porous silicon
films”, J. Lumin. 80,
99-102 (1999). 3) H. Koyama and P.M. Fauchet,
“Laser-induced thermal effects on the optical properties of free-standing
porous silicon films”, J. Appl.
Phys. 87 (4) 1788-1794 (2000). [HEART] 4) H. Koyama and P.M. Fauchet,
“Anisotropic polarization memory in thermally oxidized porous silicon”, Appl. Phys. Lett. 77 (15)
2316-2318 (2000). [HEART] ●学会発表 1) H. Koyama and P.M. Fauchet,
“Strongly superlinear light emission and large induced absorption in oxidized
porous silicon films”, Microcrystalline and Nanocrystalline
Semiconductors-1998, MRS Symp. Proc. Vol. 536, L.T. Canham, M.J. Sailor,
K. Tanaka, and C.-C. Tsai ed. (Mater. Res. Soc., Warrendale, PA, 1999) pp.
9-14. 2) H.A. Lopez, S. Chan, L.
Tsybeskov, H.
Koyama, V.P. Bondarenko, and P.M. Fauchet, “Integration of
multilayers in Er-doped porous silicon structures and advances in 1.5 μm
optoelectronic devices”, Microcrystalline and Nanocrystalline
Semiconductors-1998, MRS Symp. Proc. Vol. 536, L.T. Canham, M.J. Sailor,
K. Tanaka, and C.-C. Tsai ed. (Mater. Res. Soc., Warrendale, PA, 1999) pp.
135-140. 3) C.C. Striemer, S. Chan, H.A.
Lopez, K.D. Hirschman, H. Koyama, Q. Zhu, L. Tsybeskov, P.M. Fauchet,
N.M. Kalkhoran, and L. Depaulis, “LEDs based on oxidized porous polysilicon
on a transparent substrate”, Microcrystalline and Nanocrystalline
Semiconductors-1998, MRS Symp. Proc. Vol. 536, L.T. Canham, M.J. Sailor,
K. Tanaka, and C.-C. Tsai ed. (Mater. Res. Soc., Warrendale, PA, 1999) pp.
511-515. 4) H. Koyama and P.M. Fauchet, “Anomalous
behavior of polarization memory in oxidized porous silicon”, Proc. 1st Int.
Symp. Advanced Luminescent Materials and Quantum Confinement, M. Cahay, S.
Bandyopadhyay, D.J. Lockwood, J.P. Leburton, N. Koshida, M. Meyyappan, and T.
Sakamoto ed. (The Electrochem. Soc., Pennington, NJ, 1999) pp. 21-26. 5) 小山英樹，P.M. Fauchet，“熱酸化したポーラスシリコンにおける偏光保存の異方性”，第47回応用物理学関係連合講演会（青山学院大学） 31p-YC-5，2000年3月，予稿集 p. 921． |
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